Samsung announced some notice about their internal storage and RAM upgrade by the end of 2020 at an event of 4G/5G summit managed by Qualcomm. The company will upgrade their memory read/write speed in that segment. Samsung will start the journey by the start of 2019 with UFS 3.0 storage in their devices for 128GB/256GB/512GB storage variants which will be compatible for 5G.
Samsung will feature UFS 3.0 and LPDDR5 RAM in 2019-2020
The company also mentioned that the 1TB of UFS 3.0 storage will be available within 2021. Samsung wants to use the 3D NAND flash technology in the future to implement to increase internal memory transfer speed. However, the size of memory modules will be the same. It will increase the band speed with a higher transfer rate.
Samsung will begin the mass production process later this year and they promised a bandwidth between 44GB-51GB per second over 20% less power consumption. This will be quite interesting to see the UFS 3.0 memory and LPDDR5 RAM in future with higher speed. It’s quite expected that the smartphone companies will provide both the UFS 3.0 and LPDDR5 RAM in their flagship devices to remove the MicroSD card slot in future. Just like the nowadays, most of the companies trying to reduce the bezels and chin area along with 3.5mm audio jack for free up more space.